2N4953
TRANS NPN 30V 1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N4953 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 30V and a continuous collector current capability of 1A. The device offers a minimum DC current gain (hFE) of 200 at 150mA collector current and 10V collector-emitter voltage. Its saturation voltage (Vce(sat)) is specified at a maximum of 300mV with a base current of 15mA and a collector current of 150mA. The maximum power dissipation is 625mW. The 2N4953 is housed in a TO-92-3 through-hole package, making it suitable for board-level assembly. This transistor is commonly utilized in consumer electronics, industrial control systems, and telecommunications equipment. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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