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2N4921G

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2N4921G

TRANS NPN 40V 1A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi 2N4921G is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current (Ic) of 1A. It offers a power dissipation capability of 30W and a transition frequency (fT) of 3MHz. The DC current gain (hFE) is a minimum of 30 at 500mA and 1V. With a saturation voltage (Vce(sat)) of 600mV at 100mA and 1A, it is suitable for various power control circuits. This transistor is housed in a TO-126 (TO-225AA) package and is offered in bulk packaging. Applications include industrial control, power supplies, and consumer electronics. The operating temperature range is -65°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 500mA, 1V
Frequency - Transition3MHz
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max30 W

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