2N4921
TRANS NPN 40V 1A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N4921: This NPN bipolar junction transistor (BJT) is optimized for general-purpose amplification and switching applications. Featuring a collector-emitter breakdown voltage of 40V and a continuous collector current rating of 1A, it offers a power dissipation capability of up to 30W. The device exhibits a transition frequency of 3MHz and a minimum DC current gain (hFE) of 30 at 500mA collector current and 1V collector-emitter voltage. Saturation voltage is specified at a maximum of 600mV at 100mA base current and 1A collector current. The 2N4921 is housed in a TO-126 (TO-225AA) package for through-hole mounting and is suitable for operation across a wide temperature range from -65°C to 150°C. This component finds application in industrial power control and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 500mA, 1V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 30 W |
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