2N4919G
TRANS PNP 60V 1A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2N4919G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a 60V collector-emitter breakdown voltage and a continuous collector current capability of 1A. With a maximum power dissipation of 30W and a transition frequency of 3MHz, it is suitable for use in industrial power control, audio amplification, and voltage regulation circuits. The transistor offers a minimum DC current gain (hFE) of 30 at 500mA collector current and 1V Vce. It is packaged in a TO-126 (TO-225AA) through-hole configuration and operates within a temperature range of -65°C to 150°C. The saturation voltage (Vce(sat)) is specified at 600mV maximum for 100mA base current and 1A collector current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 500mA, 1V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 30 W |
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