2N4919
TRANS PNP 60V 1A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor (BJT), part number 2N4919. This through-hole device is rated for a collector-emitter breakdown voltage of 60V and a continuous collector current of 1A, with a maximum power dissipation of 30W. The 2N4919 exhibits a minimum DC current gain (hFE) of 30 at 500mA and 1V, and a transition frequency of 3MHz. Saturation voltage is specified at a maximum of 600mV for an Ic of 1A and Ib of 100mA. The TO-126 package is suitable for applications requiring robust power handling and thermal management. This component is frequently utilized in general-purpose amplification and switching circuits within industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 500mA, 1V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 30 W |
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