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2N4918G

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2N4918G

TRANS PNP 40V 1A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi 2N4918G is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in a TO-126 package. This device offers a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 1A, with a maximum power dissipation of 30W. It features a transition frequency of 3MHz and a saturation voltage (Vce(sat)) of 600mV at 1A collector current and 100mA base current. The minimum DC current gain (hFE) is 30 at 500mA collector current and 1V collector-emitter voltage. The operating temperature range is -65°C to 150°C. This component is suitable for applications in industrial and consumer electronics requiring general-purpose amplification and switching.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 500mA, 1V
Frequency - Transition3MHz
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max30 W

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