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2N4403RLRMG

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2N4403RLRMG

TRANS PNP 40V 0.6A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi 2N4403RLRMG is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 600mA. With a transition frequency of 200MHz and a power dissipation of 625mW, it offers robust performance for signal processing. The minimum DC current gain (hFE) is 100 at 150mA collector current and 2V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at 750mV at 50mA base current and 500mA collector current. The device is housed in a TO-92 (TO-226) package with formed leads, suitable for through-hole mounting. It operates within an ambient temperature range of -55°C to 150°C. This transistor is commonly utilized in consumer electronics, industrial control systems, and communication equipment. The 2N4403RLRMG is supplied in Tape & Box (TB) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic750mV @ 50mA, 500mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 2V
Frequency - Transition200MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max625 mW

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