2N4403RLRM
TRANS PNP 40V 0.6A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N4403RLRM is a PNP bipolar junction transistor (BJT) with a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 600mA. This through-hole component, housed in a TO-92 (TO-226) package, features a transition frequency of 200MHz and a maximum power dissipation of 625mW. The DC current gain (hFE) is a minimum of 100 at 150mA collector current and 2V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at 750mV maximum for a base current of 50mA and collector current of 500mA. Operating temperature range is from -55°C to 150°C. This transistor is suitable for applications in general-purpose amplification and switching, commonly found in consumer electronics, industrial control, and telecommunications equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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