2N4402TA
TRANS PNP 40V 0.6A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N4402TA is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 40V and can handle a continuous collector current of up to 600mA. The maximum power dissipation is 625mW. It offers a minimum DC current gain (hFE) of 50 at 150mA collector current and 2V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 750mV at 50mA base current and 500mA collector current. The 2N4402TA is housed in a TO-92-3 through-hole package and is supplied in Tape & Box (TB) packaging. This transistor is commonly utilized in consumer electronics, industrial controls, and telecommunications equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 150mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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