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2N4123TF

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2N4123TF

TRANS NPN 30V 0.2A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi's 2N4123TF is a general-purpose NPN bipolar junction transistor designed for a wide range of applications. This component features a breakdown voltage of 30V (Vce) and a maximum collector current of 200mA (Ic). With a transition frequency of 250MHz and a power dissipation of 625mW, it is suitable for signal amplification and switching tasks. The device exhibits a minimum DC current gain (hFE) of 50 at 2mA and 1V, with a Vce(sat) of 300mV at 5mA and 50mA. Packaged in a TO-92-3 (TO-226-3) through-hole configuration, this part is provided on tape and reel (TR). Typical applications include consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 2mA, 1V
Frequency - Transition250MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max625 mW

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