2N4123TAR
TRANS NPN 30V 0.2A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2N4123TAR is a general-purpose NPN bipolar junction transistor designed for various electronic applications. This component features a 30V collector-emitter breakdown voltage and a maximum collector current of 200mA. With a transition frequency of 250MHz and a maximum power dissipation of 625mW, the 2N4123TAR offers robust performance in switching and amplification circuits. It is housed in a TO-92-3 package, suitable for through-hole mounting and available in Tape & Box packaging. Key electrical parameters include a minimum DC current gain (hFE) of 50 at 2mA/1V and a Vce saturation of 300mV at 5mA/50mA. The device operates across a temperature range of -55°C to 150°C. This transistor is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 2mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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