2N4123TA
TRANS NPN 30V 0.2A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number 2N4123TA. This TO-92-3 packaged device offers a 30V collector-emitter breakdown voltage and a continuous collector current of up to 200mA. Featuring a transition frequency of 250MHz and a maximum power dissipation of 625mW, it is suitable for general-purpose amplification and switching applications. The device exhibits a minimum DC current gain (hFE) of 50 at 2mA collector current and 1V collector-emitter voltage. Saturation voltage is specified at a maximum of 300mV for a base current of 5mA and collector current of 50mA. The operating temperature range is -55°C to 150°C. Supplied in Tape & Box packaging, this component finds use in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 2mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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