2N4123RLRM
TRANS NPN 30V 0.2A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N4123RLRM is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 200mA. With a transition frequency of 250MHz and a power dissipation rating of 625mW, it offers robust performance for various electronic designs. The transistor exhibits a minimum DC current gain (hFE) of 50 at 2mA collector current and 1V Vce. Saturation voltage is specified at a maximum of 300mV with 5mA base current and 50mA collector current. The 2N4123RLRM is supplied in a TO-92 (TO-226) package with formed leads, suitable for through-hole mounting. It operates across a wide temperature range from -55°C to 150°C. This device is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 2mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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