2N4123BU
TRANS NPN 30V 0.2A TO-92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N4123BU is a bipolar junction transistor (BJT) featuring an NPN configuration. This device offers a collector-emitter breakdown voltage of 30V and a continuous collector current capability of 200mA. With a transition frequency of 250MHz and a maximum power dissipation of 625mW, the 2N4123BU is suitable for general-purpose amplification and switching applications. It exhibits a minimum DC current gain (hFE) of 50 at 2mA collector current and 1V collector-emitter voltage, and a saturation voltage (Vce Sat) of 300mV at 5mA base current and 50mA collector current. The component operates within a temperature range of -55°C to 150°C. Supplied in a TO-92-3 package, this transistor finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 2mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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