2N4033
TRANS PNP 80V 1A TO39Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor (BJT), part number 2N4033. This TO-39 packaged device offers a 80V collector-emitter breakdown voltage and a continuous collector current capability of 1A. With a maximum power dissipation of 800mW, it features a minimum DC current gain (hFE) of 75 at 100µA collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at 1V maximum for a 100mA base current and 1A collector current. This through-hole component is commonly utilized in industrial and military applications requiring robust signal amplification and switching capabilities.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 100µA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 800 mW |
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