2N3962
TRANS PNP 60V 0.2A TO18Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N3962 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 200mA. The 2N3962 offers a minimum DC current gain (hFE) of 100 at 1mA collector current and 5V collector-emitter voltage. It has a maximum power dissipation of 360mW and a collector-emitter saturation voltage of 400mV at 5mA base current and 50mA collector current. The transistor is housed in a TO-18 (TO-206AA) metal can package, suitable for through-hole mounting. This device finds application in various electronic systems including industrial controls and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 360 mW |
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