2N3906ZL1G
TRANS PNP 40V 0.2A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor (BJT), part number 2N3906ZL1G. This general-purpose device offers a 40V collector-emitter breakdown voltage and a continuous collector current capability of 200mA. With a transition frequency of 250MHz and a maximum power dissipation of 625mW, it is suitable for a wide range of applications. Key parameters include a minimum DC current gain (hFE) of 100 at 10mA collector current and 1V Vce, and a Vce(sat) of 400mV at 5mA base current and 50mA collector current. The transistor is housed in a TO-92 (TO-226) package, supplied in Tape & Box (TB) packaging. This component finds utility in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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