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2N3906RL1G

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2N3906RL1G

TRANS PNP 40V 0.2A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi's 2N3906RL1G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 200mA. With a transition frequency of 250MHz and a power dissipation of 625mW, the 2N3906RL1G is suitable for use in consumer electronics, industrial control systems, and telecommunications equipment. It offers a minimum DC current gain (hFE) of 100 at 10mA collector current and 1V collector-emitter voltage. The device is packaged in a TO-92 (TO-226) through-hole configuration, supplied on a tape and reel. The saturation voltage (Vce(sat)) is a maximum of 400mV at 5mA base current and 50mA collector current. It operates across a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Frequency - Transition250MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max625 mW

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