2N3906G
TRANS PNP 40V 0.2A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N3906G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 40V collector-emitter breakdown voltage and a maximum collector current of 200mA. With a transition frequency of 250MHz and a power dissipation of 625mW, it offers robust performance for various electronic designs. The DC current gain (hFE) is a minimum of 100 at 10mA collector current and 1V Vce. The saturation voltage (Vce Sat) is a maximum of 400mV at 5mA base current and 50mA collector current. The 2N3906G is housed in a TO-92 (TO-226) through-hole package. This device finds utility in consumer electronics, industrial controls, and telecommunications equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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