2N3905TAR
TRANS PNP 40V 0.2A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi 2N3905TAR is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, housed in a TO-92-3 package (TO-226-3), features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 200mA. The device offers a minimum DC current gain (hFE) of 50 at 10mA collector current and 1V Vce. With a maximum power dissipation of 625mW and an operating temperature range of -55°C to 150°C (TJ), it is suitable for use in industrial, consumer electronics, and telecommunications equipment. The 2N3905TAR is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |