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2N3904RLRA

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2N3904RLRA

TRANS NPN 40V 0.2A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi 2N3904RLRA is a general-purpose NPN bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a continuous collector current rating of 200mA. This device features a transition frequency of 300MHz and a maximum power dissipation of 625mW. The DC current gain (hFE) is a minimum of 40 at 100µA collector current and 1V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 200mV at 1mA base current and 10mA collector current. The collector cutoff current (Icbo) is rated at a maximum of 50nA. Designed for through-hole mounting in a TO-92 (TO-226) package, the 2N3904RLRA is supplied in Cut Tape (CT) packaging. It is suitable for applications in consumer electronics, industrial controls, and telecommunications. Operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic200mV @ 1mA, 10mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 100µA, 1V
Frequency - Transition300MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max625 mW

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