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2N3904G

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2N3904G

TRANS NPN 40V 0.2A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi 2N3904G NPN Bipolar Junction Transistor. This general-purpose BJT offers a 40V collector-emitter breakdown voltage and 200mA continuous collector current capability. Featuring a 300MHz transition frequency and 625mW power dissipation, it is housed in a TO-92 (TO-226) package suitable for through-hole mounting. The device exhibits a minimum DC current gain (hFE) of 100 at 10mA collector current and 1V Vce. Saturation voltage is specified at 300mV maximum for a 5mA base current and 50mA collector current. Operating temperature range is from -55°C to 150°C. This component finds application in various industrial and consumer electronics for switching and amplification tasks.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Frequency - Transition300MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max625 mW

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