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2N3903RLRM

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2N3903RLRM

TRANS NPN 40V 0.2A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi 2N3903RLRM is a general-purpose NPN bipolar junction transistor (BJT) designed for a wide range of applications. This component features a collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA. With a transition frequency of 250MHz and a power dissipation of 625mW, it is suitable for switching and amplification tasks. The DC current gain (hFE) is a minimum of 50 at 10mA collector current and 1V collector-emitter voltage. The transistor exhibits a Vce(sat) of 300mV at 5mA base current and 50mA collector current. Supplied in a TO-92 (TO-226) package with formed leads, this device is presented in Tape & Box (TB) packaging. The 2N3903RLRM is commonly utilized in consumer electronics, industrial control systems, and telecommunications equipment. It operates across a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 1V
Frequency - Transition250MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max625 mW

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