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2N3703

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2N3703

TRANS PNP 30V 0.5A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi 2N3703 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 500mA. With a transition frequency of 100MHz and a power dissipation of 625mW, it offers robust performance for demanding circuit designs. The minimum DC current gain (hFE) is specified at 30 at 50mA collector current and 5V Vce. Collector cutoff current is a maximum of 100nA (ICBO). The saturation voltage (Vce Saturation) is a maximum of 250mV at 5mA base current and 50mA collector current. Housed in a TO-92-3 through-hole package, the 2N3703 is suitable for use in industrial, consumer electronics, and telecommunications equipment. Operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 50mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 5V
Frequency - Transition100MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max625 mW

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