2N3416
TRANS NPN 50V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N3416 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage (Vceo) of 50V and a continuous collector current (Ic) capability of 500mA. The maximum power dissipation is 625mW, and it offers a minimum DC current gain (hFE) of 75 at 2mA collector current and 4.5V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 300mV at 3mA base current and 50mA collector current. The transistor is housed in a TO-92-3 (TO-226-3) through-hole package, suitable for mounting on printed circuit boards. Applications include consumer electronics, industrial control, and communications equipment. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 3mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 2mA, 4.5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 625 mW |
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