2N3108
TRANS NPN 60V TO39Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2N3108 is a high-performance NPN bipolar junction transistor designed for demanding applications. This component features a 60V collector-emitter breakdown voltage and a maximum power dissipation of 800mW. The 2N3108 offers a minimum DC current gain (hFE) of 40 at 150mA and 1V, with a Vce saturation of 1V at 100mA and 1A. It is packaged in a TO-39 (TO-205AD) metal can, suitable for through-hole mounting. This transistor is commonly utilized in industrial control, power supply regulation, and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA,1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 800 mW |
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