2N3055H
TRANS NPN 60V 15A TO204Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N3055H is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-204 (TO-3) package, offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 15A. With a maximum power dissipation of 115W and a transition frequency of 2.5MHz, it is suitable for power switching and amplification circuits. The device exhibits a minimum DC current gain (hFE) of 20 at 4A collector current and 4V collector-emitter voltage. Key parameters include a Vce(sat) of 3V at 3.3A base current and 10A collector current, and a collector cutoff current of 700µA. Operating temperature range is from -65°C to 200°C. This component finds use in power supplies, audio amplifiers, and general-purpose power switching applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3.3A, 10A |
| Current - Collector Cutoff (Max) | 700µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V |
| Frequency - Transition | 2.5MHz |
| Supplier Device Package | TO-204 (TO-3) |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 115 W |