2N3014
TRANS NPN 20V 0.2A TO52-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2N3014 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 20V and a continuous collector current rating of 200mA. With a transition frequency of 350MHz and a maximum power dissipation of 300mW, the 2N3014 is suitable for use in consumer electronics and industrial control systems. The transistor exhibits a minimum DC current gain (hFE) of 30 at 30mA collector current and 400mV collector-emitter voltage. It is supplied in a TO-52-3 (TO-206AC) metal can package, designed for through-hole mounting. The saturation voltage (Vce Sat) is a maximum of 350mV at 10mA base current and 100mA collector current.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AC, TO-52-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 300nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 400mV |
| Frequency - Transition | 350MHz |
| Supplier Device Package | TO-52-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 300 mW |