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2N2369

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2N2369

TRANS NPN 15V 0.2A TO18

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi 2N2369 is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage (Vce) of 15V and a maximum collector current (Ic) of 200mA. Its DC current gain (hFE) is a minimum of 40 at 10mA collector current and 1V collector-emitter voltage. The transistor has a maximum power dissipation of 360mW and a Vce(sat) of 250mV at 1mA base current and 10mA collector current. Packaged in a TO-18 (TO-206AA) metal can, the 2N2369 is suitable for through-hole mounting. It finds application in various industrial and consumer electronics, including switching circuits and general amplification stages.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 1V
Frequency - Transition-
Supplier Device PackageTO-18
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)15 V
Power - Max360 mW

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