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12A02MH-TL-E

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12A02MH-TL-E

TRANS PNP 12V 1A 3MCPH

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi PNP Bipolar Junction Transistor (BJT), part number 12A02MH-TL-E. This PNP transistor offers a collector-emitter breakdown voltage of 12V and a continuous collector current rating of 1A. Designed for surface mount applications, it features a 3-MCPH (SC-70) package. Key electrical specifications include a transition frequency of 450MHz and a maximum power dissipation of 600mW. Minimum DC current gain (hFE) is 300 at 10mA collector current and 2V collector-emitter voltage. The collector cut-off current (ICBO) is a maximum of 100nA, and Vce(sat) is 240mV maximum at 20mA base current and 400mA collector current. This device is suitable for use in industrial and consumer electronics applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic240mV @ 20mA, 400mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 10mA, 2V
Frequency - Transition450MHz
Supplier Device Package3-MCPH
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)12 V
Power - Max600 mW

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