3SK264-5-TG-E
RF MOSFET 6V CP4Manufacturer: onsemi
Categories: RF FETs, MOSFETs
Quality Control: Learn More
The onsemi 3SK264-5-TG-E is an N-Channel Dual Gate RF MOSFET designed for high-frequency applications. This component operates with a rated voltage of 15 V and a test voltage of 6 V, delivering a gain of 23 dB at 200 MHz with a test current of 10 mA. Featuring a low noise figure of 2.2 dB, it is suitable for demanding RF front-end circuitry. The device is housed in a 4-CP (TO-253-4) surface-mount package, supplied on tape and reel. Its robust construction and performance characteristics make it a valuable selection for applications in wireless communication systems, broadcast equipment, and general RF amplification stages.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-253-4, TO-253AA |
| Current Rating (Amps) | 30mA |
| Mounting Type | Surface Mount |
| Frequency | 200MHz |
| Configuration | N-Channel Dual Gate |
| Power - Output | - |
| Gain | 23dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 2.2dB |
| Supplier Device Package | 4-CP |
| Voltage - Rated | 15 V |
| Voltage - Test | 6 V |
| Current - Test | 10 mA |
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