3SK263-5-TG-E
RF MOSFET 6V CP4Manufacturer: onsemi
Categories: RF FETs, MOSFETs
Quality Control: Learn More
The onsemi 3SK263-5-TG-E is a dual-gate N-channel RF MOSFET designed for high-frequency applications. This device features a 6V test voltage and a 10mA test current, delivering a 21dB gain at 200MHz. It operates with a rated voltage of 15V and is presented in a 4-CP (TO-253-4, TO-253AA) surface-mount package, supplied on tape and reel. With a typical noise figure of 2.2dB and a current rating of 30mA, this MOSFET is suitable for RF amplification and switching circuits within the telecommunications and consumer electronics industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-253-4, TO-253AA |
| Current Rating (Amps) | 30mA |
| Mounting Type | Surface Mount |
| Frequency | 200MHz |
| Configuration | N-Channel Dual Gate |
| Power - Output | - |
| Gain | 21dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 2.2dB |
| Supplier Device Package | 4-CP |
| Voltage - Rated | 15 V |
| Voltage - Test | 6 V |
| Current - Test | 10 mA |
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