The onsemi 1SV250-TB-E is a single PIN diode designed for RF switching applications. Featuring a maximum reverse voltage of 50V and a continuous forward current of 50mA, this component offers a low resistance of 4.5 Ohms at 10mA and 100MHz, with a typical capacitance of 0.23pF at 50V and 1MHz. The device has a maximum power dissipation of 150mW and operates within a temperature range of -55°C to 125°C (TJ). Supplied in a TO-236-3, SC-59, SOT-23-3 package (3-CP), the 1SV250-TB-E is suitable for use in telecommunications and wireless infrastructure.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Diode Type | PIN - Single |
| Operating Temperature | 125°C (TJ) |
| Capacitance @ Vr, F | 0.23pF @ 50V, 1MHz |
| Resistance @ If, F | 4.5Ohm @ 10mA, 100MHz |
| Voltage - Peak Reverse (Max) | 50V |
| Supplier Device Package | 3-CP |
| Current - Max | 50 mA |
| Power Dissipation (Max) | 150 mW |
Request a Quote
Clients Also Buy
MMBV3401LT1G
RF DIODE PIN 35V 200MW SOT23-3
MBD301
DIODE SCHTTKY DET/SW 30V TO226AC
MBD330DWT1
DIODE SCHOTTKY DUAL 30V SOT-363
