L14P1
SENSOR PHOTO 880NM TOP TO206AAManufacturer: onsemi
Categories: Phototransistors
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onsemi L14P1 is an infrared phototransistor designed for applications requiring precise light detection. This component features a top-view orientation within a TO-206AA, TO-18-3 metal can package, facilitating straightforward through-hole mounting. With a maximum collector-emitter breakdown voltage of 30V and a maximum power dissipation of 300mW, it is engineered for robust performance. The phototransistor exhibits a peak sensitivity at 880nm, making it suitable for systems utilizing infrared illumination. Dark current is specified at a maximum of 100 nA, ensuring low noise operation. The operating temperature range spans from -65°C to 125°C, accommodating demanding environmental conditions. The L14P1 finds application in areas such as industrial automation, optical sensing, and consumer electronics where reliable detection of infrared light is critical. Its 16° viewing angle provides directional sensitivity.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging:Download Free CAD Model:
Technical Details:
| Packaging | |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Wavelength | 880nm |
| Mounting Type | Through Hole |
| Orientation | Top View |
| Operating Temperature | -65°C ~ 125°C |
| Viewing Angle | 16° |
| Current - Dark (Id) (Max) | 100 nA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 300 mW |
| Packaging |
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