The onsemi TIS75 is an N-channel JFET designed for general-purpose switching and amplification applications. This component features a 30V breakdown voltage (V(BR)GSS) and a low cutoff voltage (VGS off) of 800mV at 4nA. It offers a drain current (Idss) of 8mA at 15V (Vds=0) and a maximum power dissipation of 350mW. With a low on-resistance of 60 Ohms, the TIS75 is suitable for applications requiring efficient signal control. The device is housed in a TO-92-3 package, facilitating through-hole mounting. Its operating temperature range is -55°C to 150°C. This JFET finds utility in various industries, including telecommunications, industrial control, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 18pF @ 10V (VGS) |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | TO-92-3 |
| Power - Max | 350 mW |
| Resistance - RDS(On) | 60 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 800 mV @ 4 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 8 mA @ 15 V |
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