The onsemi TF414T5G is an N-Channel JFET designed for high-performance applications. This device features a drain-source voltage (Vdss) of 40V and a maximum drain current (Id) of 1mA. The static drain current (Idss) is specified at 50µA at a gate-source voltage (Vgs=0) of 10V. The cutoff voltage (Vgs off) is 4V at 1µA, with a breakdown voltage (V(BR)GSS) of 40V.
With a maximum power dissipation of 100mW, the TF414T5G is housed in a compact SOT-883 (XDFN3) package, measuring 1x0.6mm, suitable for demanding space-constrained designs. Input capacitance (Ciss) is a maximum of 0.7pF at 10V. The component is rated for operation up to 150°C (TJ). This JFET is commonly utilized in analog signal processing, switching circuits, and portable electronic devices. It is supplied on a tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 0.7pF @ 10V |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Current Drain (Id) - Max | 1 mA |
| Supplier Device Package | SOT-883 (XDFN3) (1x0.6) |
| Drain to Source Voltage (Vdss) | 40 V |
| Power - Max | 100 mW |
| Voltage - Cutoff (VGS off) @ Id | 4 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 50 µA @ 10 V |
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