onsemi TF410-TL-H N-Channel JFET with a 40V Vds rating and 1mA maximum drain current. This component features a low 30mW power dissipation and a 50µA @ 10V Idss. Designed for surface mounting in a compact 3-USFP package, it exhibits a 0.7pF maximum input capacitance at 10V. The TF410-TL-H operates across a wide temperature range up to 150°C (TJ) and has a gate-source breakdown voltage of 40V. Its typical gate cutoff voltage is 4V at 1µA. This JFET is utilized in applications demanding precise signal amplification and switching, commonly found in test and measurement equipment, industrial control systems, and audio preamplifiers. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 0.7pF @ 10V |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Current Drain (Id) - Max | 1 mA |
| Supplier Device Package | 3-USFP |
| Drain to Source Voltage (Vdss) | 40 V |
| Power - Max | 30 mW |
| Voltage - Cutoff (VGS off) @ Id | 4 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 50 µA @ 10 V |
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