onsemi TF252TH-4-TL-H is an N-Channel JFET designed for surface mount applications. This component offers a maximum drain current (Id) of 1 mA and a typical drain current (Idss) of 140 µA at 2V. The gate cutoff voltage (VGS off) is specified at 100 mV with a 1 µA drain current. With a maximum power dissipation of 100 mW and an operating junction temperature of 150°C, this device is suitable for demanding environments. The input capacitance (Ciss) is a maximum of 3.1pF at 2V. Supplied in a 3-VTFP package on tape and reel (TR), the TF252TH-4-TL-H finds application in areas such as high-frequency amplification and switching circuits within industrial and telecommunications equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 3.1pF @ 2V |
| Current Drain (Id) - Max | 1 mA |
| Supplier Device Package | 3-VTFP |
| Power - Max | 100 mW |
| Voltage - Cutoff (VGS off) @ Id | 100 mV @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 140 µA @ 2 V |
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