The onsemi SMMBF4391LT1G is an N-Channel JFET designed for high-reliability applications. This component offers a Drain-Source Voltage (Vdss) of 30V and a maximum power dissipation of 225 mW. Featuring a low Drain-Source On-Resistance (RDS(on)) of 30 Ohms and a typical Idss of 50 mA at 15V, it is suitable for various signal amplification and switching tasks. The SMMBF4391LT1G is provided in a SOT-23-3 surface-mount package, facilitating efficient board assembly. Its AEC-Q101 qualification indicates suitability for automotive and industrial sectors. The operating temperature range of -55°C to 150°C ensures performance in demanding environments. Key parameters include a 30V Gate-Source Breakdown Voltage (V(BR)GSS) and a 4V Gate-Source Cutoff Voltage (VGS off) at 10 nA. Input capacitance (Ciss) is rated at 14pF maximum at 15V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 14pF @ 15V (VGS) |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 225 mW |
| Resistance - RDS(On) | 30 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 4 V @ 10 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 50 mA @ 15 V |
| Qualification | AEC-Q101 |
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