onsemi PN4119, an N-Channel JFET, offers a 40V breakdown voltage and a maximum power dissipation of 350mW. This through-hole TO-92-3 packaged component features a typical drain current (Idss) of 200µA at 10V and a gate-source cutoff voltage (VGS off) of 2V at 1nA. Its input capacitance (Ciss) is a maximum of 3pF at 10V. Designed for reliable operation across an extended temperature range of -55°C to 150°C, the PN4119 is suitable for applications in consumer electronics and industrial control systems requiring low leakage and high input impedance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 3pF @ 10V |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Supplier Device Package | TO-92-3 |
| Power - Max | 350 mW |
| Voltage - Cutoff (VGS off) @ Id | 2 V @ 1 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 200 µA @ 10 V |
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