onsemi MMBFJ271 is a P-Channel JFET designed for high-performance applications. This surface mount device, packaged in a SOT-23-3 (TO-236-3, SC-59), offers a breakdown voltage of 30 V and a maximum power dissipation of 225 mW. The MMBFJ271 exhibits a typical drain current (Idss) of 6 mA at 15 V (Vgs=0) and a cutoff voltage (VGS off) of 1.5 V at 1 nA. Operating across a wide temperature range of -55°C to 150°C, this JFET is suitable for use in analog signal processing and switching circuits within the industrial and consumer electronics sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | SOT-23-3 |
| Power - Max | 225 mW |
| Voltage - Cutoff (VGS off) @ Id | 1.5 V @ 1 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 6 mA @ 15 V |
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