onsemi MMBF5462 P-Channel JFET, packaged in a SOT-23-3 (TO-236-3, SC-59) surface mount configuration. This device offers a breakdown voltage of 40V (V(BR)GSS) and a maximum power dissipation of 225 mW. The drain current (Idss) is specified at 4 mA @ 15V (Vgs=0), with a gate-source cutoff voltage (VGS off) of 1.8 V @ 1 µA. Input capacitance (Ciss) is a maximum of 7 pF @ 15V. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in industrial, medical, and defense electronics, often found in applications such as signal amplification and switching circuits. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Supplier Device Package | SOT-23-3 |
| Power - Max | 225 mW |
| Voltage - Cutoff (VGS off) @ Id | 1.8 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 4 mA @ 15 V |
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