onsemi MMBF5457LT1G is an N-Channel JFET designed for high-frequency applications. This component offers a Vdss of 25V and a breakdown voltage V(BR)GSS of 25V. The Idss is specified at 1mA @ 15V, with a VGS(off) @ Id of 500mV @ 10nA. Featuring a maximum power dissipation of 225mW, this JFET has an input capacitance (Ciss) of 7pF @ 15V. Packaged in a SOT-23-3 (TO-236) surface mount configuration and supplied on tape and reel, the MMBF5457LT1G operates across a temperature range of -55°C to 150°C. This device is commonly utilized in RF amplification and switching circuits within the telecommunications and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 25 V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drain to Source Voltage (Vdss) | 25 V |
| Power - Max | 225 mW |
| Voltage - Cutoff (VGS off) @ Id | 500 mV @ 10 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1 mA @ 15 V |
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