The onsemi MMBF5457LT1 is an N-Channel JFET designed for applications requiring precise signal amplification and switching. This component features a drain-to-source voltage (Vdss) of 25 V and a maximum power dissipation of 225 mW. The device is housed in a compact SOT-23-3 (TO-236) surface-mount package, suitable for high-density electronic designs. Key electrical parameters include a typical current (Idss) of 1 mA at 15 V (Vgs=0) and a gate-source cutoff voltage (Vgs off) of 500 mV at 10 nA. Input capacitance (Ciss) is rated at a maximum of 7 pF at 15 V. The operating temperature range is -55°C to 150°C. This JFET finds utility in various industrial and consumer electronics, including audio amplification circuits, RF switching, and general-purpose amplification. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 25 V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drain to Source Voltage (Vdss) | 25 V |
| Power - Max | 225 mW |
| Voltage - Cutoff (VGS off) @ Id | 500 mV @ 10 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1 mA @ 15 V |
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