onsemi MMBF4393 is an N-Channel JFET designed for high-frequency applications. This surface mount device features a drain-to-source voltage (Vdss) of 30V and a breakdown voltage (V(BR)GSS) of 30V. The device exhibits a typical drain current (Idss) of 5 mA at 0V gate-source voltage (Vgs) and 20V drain-source voltage (Vds). With a maximum power dissipation of 350 mW and an operating temperature range of -55°C to 150°C, the MMBF4393 is suitable for demanding environments. The SOT-23-3 package offers a compact footprint for dense board designs. This component is commonly utilized in RF amplifiers, low-noise preamplifiers, and switching applications across various industrial and telecommunications sectors. Its input capacitance (Ciss) is rated at a maximum of 14pF at 20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 42 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 14pF @ 20V |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | SOT-23-3 |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 350 mW |
| Resistance - RDS(On) | 100 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 500 mV @ 1 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5 mA @ 20 V |
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