onsemi KSK30YTA is an N-Channel Junction Field-Effect Transistor (JFET) designed for through-hole mounting in a TO-92-3 package. This component features a 50 V breakdown voltage (V(BR)GSS) and a maximum power dissipation of 100 mW. The drain current (Idss) is specified at 1.2 mA at 10 V with Vgs=0, and the gate-source cutoff voltage (VGS off) is 400 mV at 100 nA. Input capacitance (Ciss) is a maximum of 8.2 pF at 0 V. The KSK30YTA operates within an ambient temperature range of -55°C to 125°C. This JFET is commonly utilized in applications such as low-noise amplification, switching, and impedance matching within the audio, instrumentation, and general-purpose electronics industries. The component is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | 125°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 8.2pF @ 0V |
| Voltage - Breakdown (V(BR)GSS) | 50 V |
| Supplier Device Package | TO-92-3 |
| Power - Max | 100 mW |
| Voltage - Cutoff (VGS off) @ Id | 400 mV @ 100 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1.2 mA @ 10 V |
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