onsemi KSK30RBU is an N-Channel Junction Field-Effect Transistor (JFET) designed for through-hole mounting. This component features a breakdown voltage of 50 V (V(BR)GSS) and a cutoff voltage (VGS off) of 400 mV at 100 nA. The drain current (Idss) is specified at 300 µA at 10 V (Vds) with Vgs=0. With a maximum power dissipation of 100 mW, it operates within a temperature range of 125°C (TJ). The input capacitance (Ciss) is a maximum of 8.2 pF at 0 V (Vds). Housed in a TO-92-3 package, the KSK30RBU is suitable for applications in consumer electronics, industrial control, and audio amplification. Packaging is provided in bulk.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Operating Temperature | 125°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 8.2pF @ 0V |
| Voltage - Breakdown (V(BR)GSS) | 50 V |
| Supplier Device Package | TO-92-3 |
| Power - Max | 100 mW |
| Voltage - Cutoff (VGS off) @ Id | 400 mV @ 100 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 300 µA @ 10 V |
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