onsemi JFET P-Channel J271. This TO-92-3 packaged device offers a 30V breakdown voltage and a maximum power dissipation of 350mW. Key specifications include a drain current (Idss) of 6mA at 15V (Vgs=0) and a cutoff voltage (Vgs(off)) of 1.5V at 1nA. The J271 is suitable for through-hole mounting and operates within a temperature range of -55°C to 150°C. Industries utilizing this component include general purpose amplification and switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | TO-92-3 |
| Power - Max | 350 mW |
| Voltage - Cutoff (VGS off) @ Id | 1.5 V @ 1 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 6 mA @ 15 V |
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