onsemi JFET P-Channel J176. This TO-92-3 packaged device offers a 30V breakdown voltage and a 350mW maximum power dissipation. Key parameters include a typical 2mA drain current (Idss) at 15V drain-source voltage with zero gate-source voltage, and a 1V gate-source cutoff voltage (VGS off) at 10nA. The on-resistance (RDS(On)) is rated at 250 Ohms. This component is suitable for through-hole mounting and operates within a temperature range of -55°C to 150°C. Applications include general-purpose switching and amplification circuits in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | TO-92-3 |
| Power - Max | 350 mW |
| Resistance - RDS(On) | 250 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 10 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2 mA @ 15 V |
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