The onsemi J112RL1 is a general-purpose N-channel JFET designed for applications requiring low noise and high input impedance. This through-hole component, packaged in a TO-92 (TO-226) configuration with formed leads, offers a breakdown voltage of 35V and a maximum power dissipation of 350mW. Key electrical specifications include a drain current (Idss) of 5mA at 15V (Vgs=0) and a typical gate-source cutoff voltage (VGS off) of 1V at 1µA. The device features a low on-resistance of 50 Ohms. Operating across a wide temperature range from -65°C to 150°C, the J112RL1 is commonly utilized in audio preamplifiers, switching circuits, and general-purpose amplification stages within industrial and consumer electronics. This component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Voltage - Breakdown (V(BR)GSS) | 35 V |
| Supplier Device Package | TO-92 (TO-226) |
| Power - Max | 350 mW |
| Resistance - RDS(On) | 50 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5 mA @ 15 V |
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